Since the new Integrated Circuit technologies keep scaling down, the design of the new MOSFET device becomes more challenging. Technology Computer-Aided Design (TCAD), as an electronic design ...
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Innovative 3D floating body cell with a unique dual-gate structure delivers high sensing margins, retention times, and endurance cycles. San Jose, California -- December 11, 2023 – NEO Semiconductor, ...
SANTA CLARA, CA--(Marketwired - Aug 11, 2015) - Silvaco, Inc. today announced that China's Hangzhou Silan Integrated Circuit Co., Ltd (Silan-IC) has adopted its TCAD process and device simulation ...
The research and development process of semiconductor device technology heavily relies on technology computer-aided design simulations. However, long simulation times remain a significant challenge ...
SANTA CLARA, Calif.--(BUSINESS WIRE)--Silvaco Inc., a leading supplier of EDA software and design IP, today announced that IRIS Switzerland has adopted Silvaco TCAD simulation software to prove the ...
SANTA CLARA, Calif. & WEST LAFAYETTE, Ind.--(BUSINESS WIRE)--Silvaco Inc., Purdue University and Purdue Research Foundation announced Friday (Aug. 24) the formation of an innovative partnership aimed ...
Issues with manufacturability and yield are forcing the EDA industry and IC manufacturing to move closer together. In particular, process and device information that affect functionality and yield ...
SANTA CLARA, Calif., Sept. 24, 2024 -- Silvaco Group, Inc. (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable semiconductor design and digital ...
“Our research over the years identified and characterized the underlying physical mechanism responsible for NBTI and helped create a framework for predictive DC and AC NBTI simulation of planar FETs,” ...
Increasing complexity in semiconductor manufacturing has pushed the time to market and R&D costs significantly higher. In the world of AI, there is increased focus on efficiency to help address these ...
A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was published by Teikyo University and RIKEN. “We theoretically investigated the ...
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