The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...
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China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 volts, a fraction of the voltage required by today’s commercial chip ...
Power Transistor Market · GlobeNewswire Inc. Dublin, Jan. 29, 2026 (GLOBE NEWSWIRE) -- The "Power Transistor Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report ...
The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
European Union-funded project seeks to rearchitect chips to stop energy "leakage" and make everyday electronics, from cell phones to supercomputers, 10 times more energy efficient. Martin LaMonica is ...
STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced new radio-frequency (RF) power transistors built using an advanced ...
EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon MOSFETs EL SEGUNDO, CA, UNITED STATES ...
This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...
Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
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