Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl's best friend. Their groundbreaking research focuses on gallium nitride (GaN) transistors, ...

The research team led by Professor Daehyun Kim from the Department of Electronic Engineering at Kyungpook National University ...

A GaN HEMT incorporating the Korean company IVWorks' proprietary reGaN selective regrowth technology has become the world's ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Atomera’s oxygen-based epitaxial technology is addressing problematic parasitic channels in GaN-on-silicon HEMTs. Facing a ...

Indian semiconductor startup AGNIT Semiconductors has established a new GaN testing laboratory at IISc Bengaluru. This facility, built with a Rs 3 crore investment, will accelerate the ...

Infineon Technologies AG unveils its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications. The new CoolGaN ...

Why Navitas Semiconductor’s GaN solution is unique. Why GaN-based power supplies are smaller and more efficient. Gallium-nitride (GaN) transistors are able to handle large currents at high switching ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...