Nature

Low Power Design in CMOS and FinFET Logic Circuits

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
EDN

Scaling down on the wings of a FinFET-DGCMOS

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
Semiconductor Engineering

SRAM-Based IMC For Cryogenic CMOS Using Commercial 5 nm FinFETs

A technical paper titled “Cryogenic In-Memory Computing for Quantum Processors Using Commercial 5-nm FinFETs” was published by researchers at University of Stuttgart, Indian Institute of Technology ...
AZoNano

Breaking Down the Issues of Scaling Down Semiconductor Devices

Semiconductor chips have been getting smaller and smaller every year since the 1960s, with double the number of transistors fitting into the same chip space each year following the predicted ...
ExtremeTech

Beyond 7nm and silicon: The first III-V CMOS wafers roll off production lines

Imec, perhaps the world's top semiconductor research center, has created the first monolithic III-V CMOS transistors on 300mm silicon wafers. With current silicon-based transistors hitting a wall at ...
Semiconductor Engineering

Post Layout Simulation Is Becoming The Bottleneck For Analog Verification

My, have times changed. I remember when I first started out as a green analog designer right out of college, we would cut rubylith masking film on a large light table representing the different layers ...
ExtremeTech

Beyond 7nm and silicon: The first III-V CMOS wafers roll off production lines

Imec, perhaps the world's top semiconductor research center, has created the first monolithic III-V CMOS transistors on 300mm silicon wafers. With current silicon-based transistors hitting a wall at ...