MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...
The VOW3120-X017T’s low current consumption of 2.5 mA makes it a practical choice in power design applications where high efficiency operation is required. The VOW3120-X017T boasts typical delays of ...
Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...
MALVERN, Pa., Dec. 02, 2020 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing ...
Vishay Intertechnology, Inc. broadened its optoelectronics portfolio with the VOW3120-X017T, a new IGBT and MOSFET driver for motor drives, alternative energy, welding equipment, and other high ...
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