In recent years, the space market has shifted toward more efficient power solutions by using previously unknown technology in space systems. Because space hardware is subjected to extreme ...

GaN-inspired advances in on-board battery chargers. How AlGaN/GaN HEMTs deliver high switching frequencies. Buck converter reference design for 48-V apps that leverages GaN FETs. Electric vehicles ...

Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...

The lateral structure is currently the most widely used of the various GaN transistor structures. High-electron–mobility transistors (HEMTs) made of gallium nitride are lateral devices that use a ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Device Market by Device Type, Voltage Range, Application, Vertical, and Geography - Global Forecast to 2023" report has been added to Research and Markets' ...

Efficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board engineered ...

With R DS(on) levels as low as 25 mΩ, Cambridge GaN Devices' (CGD) ICeGaN P2 series of power ICs support multi-kilowatt power at the highest levels of efficiency. These high-power ICs offer a ...

The global Radio Frequency Gallium Nitride (RF GaN) market is poised for substantial growth, driven by advancements in telecommunications, defense, and satellite communications. GaN's superior ...